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STTH2R02U Datasheet(PDF) 4 Page - STMicroelectronics |
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STTH2R02U Datasheet(HTML) 4 Page - STMicroelectronics |
4 / 9 page Characteristics STTH2R02 4/9 Figure 5. Relative variation of thermal impedance junction to case versus pulse duration (SMB) Figure 6. Relative variation of thermal impedance junction to case versus pulse duration (DO-15) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 Z th(j-a)/Rth(j-a) Single pulse SMB S cu=1cm² tP(s) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 Z th(j-a)/Rth(j-a) Single pulse DO-15 Lleads=10mm tP(s) Figure 7. Junction capacitance versus reverse applied voltage (typical values) Figure 8. Reverse recovery charges versus dIF/dt (typical values) 1 10 100 1 10 100 1000 C(pF) F=1MHz V osc=30mVRMS T j=25°C VR(V) 0 10 20 30 40 50 60 10 100 1000 Q RR(nC) I F=2A V R=160V T j=125°C T j=25°C dIF/dt(A/µs) Figure 9. Reverse recovery time versus dIF/dt (typical values) Figure 10. Peak reverse recovery current versus dIF/dt (typical values) 0 10 20 30 40 50 60 10 100 1000 t RR(ns) I F=2A V R=160V T j=125°C T j=25°C dIF/dt(A/µs) 0 1 2 3 4 5 6 10 100 1000 I RM(A) I F=2A V R=160V T j=125°C T j=25°C dIF/dt(A/µs) |
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