April 1991

3

Philips Semiconductors

Product specification

N-channel dual-gate MOS-FET

BF997

LIMITING VALUES

In according with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

drain-source voltage

−

20

V

drain current (DC)

−

30

mA

average drain current

−

30

mA

gate 1-source current

−±10

mA

gate 2-source current

−±10

mA

total power dissipation

−

200

mW

storage temperature

−65

+150

°C

junction temperature

−

150

°C

Fig.2 Power derating curve.

handbook, halfpage

0

200

0

100

200

MGE792

100

Tamb (°C)

Ptot

(mW)

THERMAL CHARACTERISTICS

Note to the Limiting values and the Thermal characteristics

1. Device mounted on a ceramic substrate of 8

× 10 × 0.7 mm.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

thermal resistance from junction to ambient

in free air; note 1

460

K/W