TPCA8010-H datasheet(3/4 Pages) TOSHIBA

Part #	TPCA8010-H

Description	High Speed and High Efficiency DC-DC Converters

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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3 / 4 page

TPCA8010-H

2004-3-2

3

Electrical Characteristics (Ta

= 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±16 V, V DS = 0 V



±10

µA

Drain cut-OFF current

IDSS

VDS = 200 V, V GS = 0 V



100

µA

V (BR) DSS

ID = 10 mA, VGS = 0 V

200



V (BR) DSX

ID = 10 mA, VGS = -5 V

200



V

Drain-source breakdown voltage

V (BR) DSX

ID = 10 mA, VGS = -20 V

150



Gate threshold voltage

Vth

VDS = 10 V, ID = 1mA

2.0



4.0

V

Drain-source ON resistance

RDS (ON)

VGS = 10 V, ID = 2.7A



0.38

‘(0.45)

m

Ω

Forward transfer admittance

|Yfs|

VDS = 10 V, ID = 2.7A

TBD



S

Input capacitance

Ciss



600



Reverse transfer capacitance

Crss



20



Output capacitance

Coss

VDS = 10 V, VGS = 0 V , f = 1 MHz



220



pF

Rise time

tr



(7)



Turn-ON time

ton



(17)



Fall time

tf



(13)



Switching time

Turn-OFF time

toff

Duty <

= 1%, tw = 10 µs



(70)



ns

Total gate charge

(gate-source plus gate-drain)

Qg



(10)



Gate-source charge 1

Qgs1



(7.6)



Gate-drain (“miller”) charge

Qgd



(2.4)



Gate switch charge

QSW

VDD

∼− 160 V, VGS = 10 V, ID = 5.5A



(3.7)



nC

Source-Drain Ratings and Characteristics (Ta

= 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Drain reverse current

Pulse

(Note 1)

IDRP



11

A

Forward voltage (diode)

VDSF

IDR = 5.5A, V GS = 0 V



−2.0

V

TENTATIVE

VDD ∼

− 100V

V

0 V

VGS

10 V

ID = 2.7 A

VOUT

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