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SD12CT1 Datasheet(PDF) 2 Page - ON Semiconductor |
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SD12CT1 Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 4 page Bi−Directional TVS IPP IPP V I IR IT IT IR VRWM VC VBR VRWM VC VBR SD12CT1 http://onsemi.com 2 MAXIMUM RATINGS Rating Symbol Value Unit Peak Power Dissipation @ 20 ms @ TL ≤ 25°C Ppk 350 W IEC 61000−4−2 (ESD) Air Contact ±30 ±30 kV IEC 61000−4−4 (EFT) 40 A Storage Temperature Range Tstg −55 to +150 °C Operating Temperature Range TJ −55 to +125 °C Lead Solder Temperature − Maximum (10 Second Duration) TL 260 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage IR Maximum Reverse Leakage Current @ VRWM VBR Breakdown Voltage @ IT IT Test Current QVBR Maximum Temperature Variation of VBR ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified) Parameter Conditions Symbol Min Typ Max Unit Reverse Working Voltage (Note 1) VRWM 12 V Breakdown Voltage IT = 1 mA, (Note 2) VBR 13.3 V Reverse Leakage Current VRWM = 12 V IR 1.0 mA Clamping Voltage Additional Clamping Voltage IPP = 5 A, (8 x 20 msec Waveform) IPP = 15 A, (8 x 20 msec Waveform) VC 19 24 V Maximum Peak Pulse Current 8 x 20 msec Waveform IPP 15 A Capacitance VR = 0 V, f = 1 MHz Cj 64 pF VR = 12 V, f = 1 MHz j 36 1. TVS devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater than the DC or continuous peak operating voltage level. 2. VBR is measured at pulse test current IT. |
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