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FSQ0365RN Datasheet(PDF) 4 Page - Fairchild Semiconductor

Part No. FSQ0365RN
Description  Green Mode Fairchild Power Switch (FPS) for Quasi-Resonant Operation - Low EMI and High Efficiency
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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FSQ0365RN Datasheet(HTML) 4 Page - Fairchild Semiconductor

 
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© 2006 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FSQ0365RN, FSQ0265RN, FSQ0165RN, FSQ311 Rev. 1.0.0
4
Absolute Maximum Ratings
The “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. The
device should not be operated at these limits. The parametric values defined in the Electrical Characteristics tables
are not guaranteed at the absolute maximum ratings. TA = 25°C, unless otherwise specified.
Notes:
6. Repetitive rating: Pulse width limited by maximum junction temperature.
7. L=14mH, starting TJ=25°C.
8. Meets JEDEC Standards JESD 22-A114 and 22-A115.
Thermal Impedance(9)
Notes:
9. All items are tested with the standards JESD 51-2 and 51-10 (DIP).
10. Free-standing, with no heat-sink, under natural convection.
11. Infinite cooling condition - refer to the SEMI G30-88.
12. Measured on the PKG top surface.
Symbol
Parameter
Min.
Max.
Unit
Vstr
Vstr Pin Voltage
500
V
VDS
Drain Pin Voltage
650
V
VCC
Supply Voltage
20
V
VFB
Feedback Voltage Range
-0.3
9.0
V
VSync
Sync Pin Voltage
-0.3
9.0
V
IDM
Drain Current Pulsed(6)
FSQ0365RN
12
A
FSQ0265RN
8
FSQ0165RN
4
FSQ311
1.5
EAS
Single Pulsed Avalanche Energy(7)
FSQ0365RN
230
mJ
FSQ0265RN
140
FSQ0165RN
50
FSQ311
10
PD
Total Power Dissipation
1.5
W
TJ
Operating Junction Temperature
Internally limited
°C
TA
Operating Ambient Temperature
-25
85
°C
TSTG
Storage Temperature
-55
150
°C
ESD Capability, HBM Model(8)
CLASS1 C
ESD Capability, Machine Model(8)
CLASS B
Symbol
Parameter
Value
Unit
8-DIP
θJA(10)
Junction-to-Ambient Thermal Resistance
80
°C/W
θJC(11)
Junction-to-Case Thermal Resistance
20
θJT(12)
Junction-to-Top Thermal Resistance
35


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