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BF909 Datasheet(PDF) 3 Page - NXP Semiconductors

Part No. BF909
Description  N-channel dual gate MOS-FETs
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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BF909 Datasheet(HTML) 3 Page - NXP Semiconductors

 
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1995 Apr 25
3
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF909; BF909R
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
7V
ID
drain current
40
mA
IG1
gate 1 current
−±10
mA
IG2
gate 2 current
−±10
mA
Ptot
total power dissipation
see Fig.3
BF909
up to Tamb =50 °C; note 1 −
200
mW
BF909R
up to Tamb =40 °C; note 1 −
200
mW
Tstg
storage temperature
−65
+150
°C
Tj
operating junction temperature
150
°C
Fig.3 Power derating curves.
handbook, halfpage
0
50
100
200
250
0
200
MLB935
150
150
100
50
Ptot
(mW)
T
( C)
amb
o
BF909R
BF909


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