1999 May 14

2

Philips Semiconductors

Product specification

N-channel dual gate MOS-FETs

BF904A; BF904AR; BF904AWR

FEATURES

• Specially designed for use at 5 V

supply voltage

• Short channel transistor with high

transfer admittance to input

capacitance ratio

• Low noise gain controlled amplifier

up to 1 GHz

• Superior cross-modulation

performance during AGC.

APPLICATIONS

• VHF and UHF applications with

3 to 7 V supply voltage such as

television tuners and professional

communications equipment.

DESCRIPTION

Enhancement type field-effect

transistors. The transistors consist of

an amplifier MOS-FET with source

and substrate interconnected and an

internal bias circuit to ensure good

cross-modulation performance during

AGC.

The BF904A, BF904AR and

BF904AWR are encapsulated in the

SOT143B, SOT143R and SOT343R

plastic packages respectively.

PINNING

PIN

DESCRIPTION

1

source

2

drain

3

gate 2

4

gate 1

Fig.1

Simplified outline

(SOT143B).

BF904A marking code: M41.

handbook, 2 columns

Top view

MSB014

12

3

4

Fig.2

Simplified outline

(SOT143R).

BF904AR marking code: M42.

handbook, 2 columns

Top view

MSB035

1

2

4

3

Fig.3

Simplified outline

(SOT343R).

BF904AWR marking code: MH.

halfpage

Top view

MSB842

21

4

3

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

drain-source voltage

−−

7V

drain current

−−

30

mA

total power dissipation

−−

200

mW

y

forward transfer admittance

22

25

30

mS

input capacitance at gate 1

−

2.2

2.6

pF

reverse transfer capacitance

f = 1 MHz

−

25

35

fF

F

noise figure

f = 800 MHz

−

2

−

dB

operating junction temperature

−−

150

°C

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport

and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.