Electronic Components Datasheet Search
  English  ▼

Delete All
ON OFF
ALLDATASHEET.COM

X  

Preview PDF Download HTML

BF904 Datasheet(PDF) 4 Page - NXP Semiconductors

Part No. BF904
Description  N-channel dual gate MOS-FETs
Download  16 Pages
Scroll/Zoom Zoom In 100% Zoom Out
Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
Logo 

BF904 Datasheet(HTML) 4 Page - NXP Semiconductors

 
Zoom Inzoom in Zoom Outzoom out
 4 / 16 page
background image
1999 May 17
4
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904; BF904R
THERMAL CHARACTERISTICS
Notes
1. Device mounted on a printed-circuit board.
2. Ts is the temperature at the soldering point of the source lead.
STATIC CHARACTERISTICS
Tj =25 °C unless otherwise specified.
Note
1. RG1 connects gate 1 to VGG = 5 V; see Fig.20.
DYNAMIC CHARACTERISTICS
Common source; Tamb =25 °C; VDS = 5 V; VG2-S = 4 V; ID = 10 mA; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
BF904
500
K/W
BF904R
550
K/W
Rth j-s
thermal resistance from junction to soldering point
note 2
BF904
Ts =92 °C
290
K/W
BF904R
Ts =78 °C
360
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V(BR)G1-SS
gate 1-source breakdown voltage
VG2-S =VDS = 0; IG1-S = 10 mA
6
15
V
V(BR)G2-SS
gate 2-source breakdown voltage
VG1-S =VDS = 0; IG2-S = 10 mA
6
15
V
V(F)S-G1
forward source-gate 1 voltage
VG2-S =VDS = 0; IS-G1 = 10 mA
0.5
1.5
V
V(F)S-G2
forward source-gate 2 voltage
VG1-S =VDS = 0; IS-G2 = 10 mA
0.5
1.5
V
VG1-S(th)
gate 1-source threshold voltage
VG2-S =4V; VDS =5V; ID =20 µA
0.3
1
V
VG2-S(th)
gate 2-source threshold voltage
VG1-S =VDS =5V; ID =20 µA
0.3
1.2
V
IDSX
drain-source current
VG2-S =4V; VDS =5V;
RG1 = 120 kΩ; note 1
813
mA
IG1-SS
gate 1 cut-off current
VG2-S =VDS = 0; VG1-S =5V
50
nA
IG2-SS
gate 2 cut-off current
VG1-S =VDS = 0; VG2-S =5V
50
nA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
yfs
forward transfer admittance
pulsed; Tj =25 °C
222530mS
Cig1-s
input capacitance at gate 1
f = 1 MHz
2.2
2.6
pF
Cig2-s
input capacitance at gate 2
f = 1 MHz
1
1.5
2
pF
Cos
drain-source capacitance
f = 1 MHz
1
1.3
1.6
pF
Crs
reverse transfer capacitance f = 1 MHz
25
35
fF
F
noise figure
f = 200 MHz; GS = 2 mS; BS =BSopt
1
1.5
dB
f = 800 MHz; GS =GSopt; BS =BSopt
2
2.8
dB


Html Pages

1  2  3  4  5  6  7  8  9  10  11  12  13  14  15  16 


Datasheet Download




Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ]  

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Alldatasheet API   |   Link Exchange   |   Manufacturer List
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn