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BF901 Datasheet(PDF) 4 Page - NXP Semiconductors

Part No. BF901
Description  Silicon n-channel dual gate MOS-FETs
Download  7 Pages
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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BF901 Datasheet(HTML) 4 Page - NXP Semiconductors

   
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November 1992
4
Philips Semiconductors
Product specification
Silicon n-channel dual gate MOS-FETs
BF901; BF901R
STATIC CHARACTERISTICS
Tj = 25 °C.
DYNAMIC CHARACTERISTICS
Measuring conditions (common source): ID = 14 mA; VDS = 5 V; VG2-S = 4 V; Tamb = 25 °C.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
±IG1-SS
gate 1 cut-off current
±VG1-S = 5 V; VG2-S = VDS = 0
50
nA
±I
G2-SS
gate 2 cut-off current
±VG2-S = 5 V; VG1-S = VDS = 0
50
nA
±V
(BR)G1-SS
gate 1-source breakdown voltage
±IG1-SS = 10 mA; VG2-S = VDS = 0
6
20
V
±V(BR)G2-SS
gate 2-source breakdown voltage
±IG2-SS = 10 mA; VG1-S = VDS = 0
6
20
V
VG1-S(th)
gate 1-source threshold voltage
ID = 20 µA; VDS = 8 V; VG2-S = 4 V
0
0.7
V
VG2-S(th)
gate 2-source threshold voltage
ID = 20 µA; VDS = 8 V; VG1-S = 0
0.3
1
V
IDSX
drain-source current
VDS = 4 V; VG1-S = 1.1 V; VG2-S = 3.4 V 2
18
mA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
 Yfs
transfer admittance
pulsed; Tj = 25 °C
252835mS
Cig1-s
input capacitance at gate 1
f = 1 MHz
2.35
2.75
pF
Cig2-s
input capacitance at gate 2
f = 1 MHz
1.2
pF
Cos
output capacitance
f = 1 MHz
1.4
pF
Crs
feedback capacitance
f = 1 MHz
25
fF
F
noise figure
f = 200 MHz; Gs = 2 mS; Bs = Bsopt.
0.7
dB
f = 800 MHz; Gs = 3.3 mS; Bs = Bsopt.
1.7
dB


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