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BF901 Datasheet(PDF) 2 Page - NXP Semiconductors

Part No. BF901
Description  Silicon n-channel dual gate MOS-FETs
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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BF901 Datasheet(HTML) 2 Page - NXP Semiconductors

   
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November 1992
2
Philips Semiconductors
Product specification
Silicon n-channel dual gate MOS-FETs
BF901; BF901R
FEATURES
• Intended for low voltage operation
• Short channel transistor with high
ratio
 Yfs :Cis
• Low noise gain-controlled amplifier
to 1 GHz
• BF901R has reverse pinning.
DESCRIPTION
Enhancement type field-effect
transistors in plastic microminiature
SOT143 and SOT143R envelopes,
with source and substrate
interconnected. They are intended for
UHF and VHF applications, such as
television tuners and professional
communications equipment
especially suited for low voltage
operation. These MOS-FET tetrodes
are protected against excessive input
voltage surges by integrated
back-to-back diodes between gates
and source.
PINNING
PIN
DESCRIPTION
1
source
2
drain
3
gate 2
4
gate 1
QUICK REFERENCE DATA
SYMBOL
PARAMETER
TYP.
MAX.
UNIT
VDS
drain-source voltage
12
V
ID
drain current
30
mA
Ptot
total power dissipation
200
mW
Tj
junction temperature
150
°C
 Y
fs
transfer admittance
28
35
mS
Cig1-s
input capacitance at gate 1
2.35
2.75
pF
Crs
feedback capacitance
25
fF
F
noise figure at 800 MHz
1.7
dB
Fig.1 Simplified outline (SOT143) and symbol.
Marking code: MO1.
handbook, halfpage
s,b
d
g
1
g
2
43
2
1
Top view
MAM039
Fig.2 Simplified outline (SOT143R) and symbol.
Marking code: MO2.
handbook, halfpage
s,b
d
g
1
g
2
MAM040
34
1
2
Top view


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