Philips Semiconductors

PHM12NQ20T

TrenchMOS™ standard level FET

Preliminary data

Rev. 01 — 30 January 2003

6 of 12

9397 750 10876

© Koninklijke Philips Electronics N.V. 2003. All rights reserved.

Fig 5.

Output characteristics: drain current as a

function of drain-source voltage; typical values.

Fig 6.

Transfer characteristics: drain current as a

function of gate-source voltage; typical values.

Fig 7.

Drain-source on-state resistance as a function

of drain current; typical values.

Fig 8.

Normalized drain-source on-state resistance

factor as a function of junction temperature.

003aaa236

0

1

2

3

4

00.5

1

1.5

2

VDS (V)

(A)

3.8 V

10 V

4 V

4.5 V

ID

VGS = 3.6 V

003aaa237

0

2

4

6

8

01

23

45

(A)

ID

VGS (V)

Tj = 150 °C

25

°C

003aaa238

0

100

200

300

400

02

4

6

8

3.8 V

(m

Ω)

RDSon

ID (A)

VGS = 4 V

4.5 V

5 V

10 V

03al52

0

1

2

3

-60

0

60

120

180

Tj (°C)

a

a

R

DSon

R

DSon 25 C

°

()

-----------------------------

=