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LX5514 Datasheet(PDF) 1 Page - Microsemi Corporation |
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LX5514 Datasheet(HTML) 1 Page - Microsemi Corporation |
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1 / 2 page  LX5514 PRODUCTION DATA SHEET Microsemi Integrated Products Group 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 1 Copyright © 2004 Rev. 1.0, 2006-06-21 2. 1 InGaP HBT 2.3 – 2.5 GHz Power Amplifier TM ® DESCRIPTION The LX5514 is a power amplifier optimized for WLAN applications in the 2.3 – 2.5GHz frequency range. The power amplifier is implemented as a two-stage monolithic microwave integrated circuit (MMIC) with active bias and output pre-matching. The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). Power gain of 28dB is obtained with a low quiescent current of 80mA. For 20dBm OFDM output power (64QAM, 54Mbps), the PA provides a low EVM (Error-Vector Magnitude) of 3.0%, and consumes 150mA total DC current. The LX5514 is available in a standard 12-pin 2mm x 2mm micro- lead package (MLP12L). The compact footprint, low profile, and thermal capability of the MLP package make the LX5514 an ideal solution for medium- gain power amplifier requirements for IEEE 802.11b/g applications. IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com KEY FEATUR ES Advanced InGaP HBT 2.3 – 2.5GHz Operation Single-Polarity 3.3V Supply Quiescent Current 80mA Power Gain 28dB Total Current 150mA for POUT=20dBm OFDM EVM ~3 % 54Mbps / 64QAM Small Footprint: 2 x 2mm Low Profile: 0.46mm APPLI C ATION S IEEE 802.11b/g PRODUCT H I GHLIGHT PACKAGE ORDER INFO LL Plastic MLPQ 12 pin RoHS Compliant / Pb-free LX5514LL Note: Available in Tape & Reel. Append the letters “TR” to the part number. (i.e. LX5514LL-TR) |
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