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BAS101S Datasheet(PDF) 5 Page - NXP Semiconductors |
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BAS101S Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 11 page BAS101_BAS101S_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 8 September 2006 5 of 11 Philips Semiconductors BAS101; BAS101S High-voltage switching diodes (1) Tamb = 150 °C (2) Tamb =75 °C (3) Tamb =25 °C Based on square wave currents. Tj =25 °C; prior to surge Fig 1. Forward current as a function of forward voltage; typical values Fig 2. Non-repetitive peak forward current as a function of pulse duration; maximum values VR = 300 V f = 1 MHz; Tamb =25 °C Fig 3. Reverse current as a function of junction temperature; typical values Fig 4. Diode capacitance as a function of reverse voltage; typical values 0 0.5 1 1.5 IF (mA) VF (V) 500 0 400 300 200 100 mhc618 (2) (1) (3) mbg703 10 1 102 IFSM (A) 10−1 tp (µs) 1104 103 10 102 200 0 40 80 120 IR ( µA) 160 Tj (°C) 102 10 1 10−1 10−2 mhc619 010 20 40 0.42 0.3 0.34 0.38 30 Cd (pF) VR (V) mhc621 |
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