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IRIS-G6623 Datasheet(PDF) 2 Page - International Rectifier

Part No. IRIS-G6623
Description  INTEGRATED SWITCHER
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRIS-G6623 Datasheet(HTML) 2 Page - International Rectifier

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Absolute Maximum Ratings (Ta=25ºC)
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are
absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The thermal resistance and power
dissipation ratings are measured under board mounted and still air conditions.
Symbol
Definition
Terminals Max. Ratings
Units
Note
IDpeak
Drain Current
*1
1-2
12
A
Single Pulse
V2-3=0.78V
Ta=-20~+125℃
VDD=99V, L=20mH
IL peak=3.5A
Vin
Input voltage for control part
4-3
35
V
Vth
O.C.P/F.B Pin voltage
5-3
6
V
24
W
With infintite heatsink
1.5
W
Without heatsink
Power dissipation for control part
(Control IC) *4
Internal frame temperature
Refer to recommended
in operation
operating temperature
Top
Operating ambient temperature
-
-20 ~ +125
Tstg
Storage temperature
-
-40 ~ +125
Tch
Channel temperature
-
150
Specified by
Vin×Iin
-
TF
-20 ~ +125
4-3
PD2
0.8
W
A
Single pulse avalanche energy *2
1-2
EAS
157
mJ
Maximum switching current *5
1-2
IDMAX
12
Single Pulse
PD1
Power dissipation for MOSFET *3
1-2
V2-3
Fig.1
IRIS-G6623
*1 Refer to MOS FET A.S.O curve
*2 MOS FET Tch-EAS curve
*3 Refer to MOS FET Ta-PD1 curve
*4 Refer to TF-PD2 curve for Control IC (See page 5)
*5 Maximum switching current.
The maximum switching current is the Drain current determined by the drive voltage of the IC and
threshold voltage (Vth) of MOS FET. Therefore, in the event that voltage drop occurs between Pin 2 and
Pin 3 due to patterning, the maximum switching current decreases as shown by V
2-3 in Fig.1
Accordingly please use this device within the decrease value, referring to the derating
curve of the maximum switching current.


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