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BF763 Datasheet(PDF) 3 Page - NXP Semiconductors |
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BF763 Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 5 page  September 1995 3 Philips Semiconductors Product specification NPN 2 GHz wideband transistor BF763 CHARACTERISTICS Tj =25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)CEO collector-emitter breakdown voltage IC = 1 mA; IB =0 15 −− V V(BR)CBO collector-base breakdown voltage IC =10 µA; IE =0 25 −− V VCE sat collector-emitter saturation voltage IC = 10 mA; IB = 1 mA −− 0.5 V ICBO collector cut-off current IE = 0; VCB = 10 V −− 50 nA hFE DC current gain IC = 5 mA; VCE = 10 V 25 − 250 fT transition frequency IC = 5 mA; VCE = 10 V; f = 100 MHz − 1.8 − GHz F noise figure IC = 5 mA; VCE = 10 V; f = 800 MHz; Tamb =25 °C; Zs =60 Ω − 5.0 − dB |
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