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C2D10120 Datasheet(PDF) 2 Page - List of Unclassifed Manufacturers

Part No. C2D10120
Description  Silicon Carbide Schottky Diode
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Manufacturer  ETC1 [List of Unclassifed Manufacturers]
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C2D10120 Datasheet(HTML) 2 Page - List of Unclassifed Manufacturers

  C2D10120 Datasheet HTML 1Page - List of Unclassifed Manufacturers C2D10120 Datasheet HTML 2Page - List of Unclassifed Manufacturers C2D10120 Datasheet HTML 3Page - List of Unclassifed Manufacturers C2D10120 Datasheet HTML 4Page - List of Unclassifed Manufacturers C2D10120 Datasheet HTML 5Page - List of Unclassifed Manufacturers  
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C2D10120 Rev. -
Electrical Characteristics
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
Note
V
F
Forward Voltage
1.6
2.5
1.8
3.0
V
I
F = 10 A
T
J=25°C
I
F = 10 A
T
J=175°C
I
R
Reverse Current
10
20
200
1000
μA
V
R = 1200 V
T
J=25°C
V
R = 1200 V
T
J=150°C
Q
C
Total Capacitive Charge
61
nC
V
R = 1200 V, IF = 10 A
di/dt = 500 A/μs
T
J = 25°C
C
Total Capacitance
1000
80
59
pF
V
R = 0 V, TJ = 25°C, f = 1 MHz
V
R = 200 V, TJ = 25˚C, f = 1 MHz
V
R = 400 V, TJ = 25˚C, f = 1 MHz
Note:
This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
Note
R
θJC
Thermal Resistance from Junction
to Case
0.48
°C/W
Typical Performance
1.
Figure 1. Forward Characteristics
0
2
4
6
8
10
12
14
16
18
20
0.0
1.0
2.0
3.0
4.0
5.0
VF Forward Voltage (V)
TJ = 25˚C
TJ = 75˚C
TJ = 125˚C
TJ = 175˚C
Figure 2. Reverse Characteristics
0
20
40
60
80
100
120
140
160
180
200
0
500
1000
1500
2000
VR Reverse Voltage (V)
T
J = 25˚C
T
J = 75˚C
T
J = 125˚C
T
J = 175˚C


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