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BF720 Datasheet(PDF) 3 Page - NXP Semiconductors |
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BF720 Datasheet(HTML) 3 Page - NXP Semiconductors |
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1999 Apr 21 3 Philips Semiconductors Product specification NPN high-voltage transistors BF720; BF722 THERMAL CHARACTERISTICS Note 1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated Handbook”. CHARACTERISTICS Tj =25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 106 K/W Rth j-s thermal resistance from junction to soldering point note 1 25 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = 200 V − 10 nA IE = 0; VCB = 200 V; Tj = 150 °C − 10 µA IEBO emitter cut-off current IC = 0; VEB =5V − 50 nA hFE DC current gain IC = 25 mA; VCE =20V 50 − VCEsat collector-emitter saturation voltage IC = 30 mA; IB =5mA − 0.6 V Cre feedback capacitance IC =ic = 0; VCE = 30 V; f = 1 MHz − 1.6 pF fT transition frequency IC = 10 mA; VCE = 10 V; f = 100 MHz 60 − MHz |
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