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BF620 Datasheet(PDF) 3 Page - NXP Semiconductors

Part No. BF620
Description  NPN high-voltage transistors
Download  8 Pages
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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BF620 Datasheet(HTML) 3 Page - NXP Semiconductors

   
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1999 Apr 21
3
Philips Semiconductors
Product specification
NPN high-voltage transistors
BF620; BF622
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
CHARACTERISTICS
Tj =25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
100
K/W
Rth j-s
thermal resistance from junction to soldering point
20
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 200 V
10
nA
IE = 0; VCB = 200 V; Tj = 150 °C
10
µA
IEBO
emitter cut-off current
IC = 0; VEB =5V
50
nA
hFE
DC current gain
IC = 25 mA; VCE =20V
50
VCEsat
collector-emitter saturation voltage
IC = 30 mA; IB =5mA
600
mV
Cre
feedback capacitance
IC =ic = 0; VCE = 30 V; f = 1 MHz
1.6
pF
fT
transition frequency
IC = 10 mA; VCE = 10 V; f = 100 MHz 60
MHz


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