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M81700FP Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor |
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M81700FP Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor |
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Mar. 2002 PRELIMINARY Notice: This is not a final specification. Som e param etric lim its are subject to change. MITSUBISHI SEMICONDUCTORS <HVIC> M81700FP HIGH VOLTAGE HALF BRIDGE DRIVER µA mA mA µA V V V V V V V V V V µA µA V V µs V V µs A A Ω Ω ns ns ns ns ns ns ns ns ns ns ns — — — — 13.8 — — 6.0 — 1.4 — 6.0 — 1.4 — — 7.5 0.1 — 7.5 0.1 — — — — — — — — — — — — — — — — — 0.4 0.75 — 14.4 — 8.4 6.8 3.1 2.4 8.4 6.8 3.1 2.4 75 — 8.6 0.4 10 8.6 0.4 10 –2.5 2.5 10 2.5 — — — — — — — — — — — 1 0.7 1.5 10 — 0.1 9.5 — 4.1 — 9.5 — 4.1 — 150 1.0 9.7 0.7 — 9.7 0.7 — — — 13 3 350 330 60 30 350 330 60 30 30 30 350 Floating Supply Leakage Current VBS standby Current VCC standby Current VDD standby Current High Level Output Voltage Low Level Output Voltage High Level Input Threshold Voltage Low Level Input Threshold Voltage High Level Input Threshold Voltage Low Level Input Threshold Voltage Shutdown High Level Input Threshold Voltage Shutdown Low Level Input Threshold Voltage Shutdown High Level Input Threshold Voltage Shutdown Low Level Input Threshold Voltage High Level Input Bias Current Low Level Input Bias Current VBS Supply UV Reset Voltage VBS Supply UV Hysteresis Voltage VBS Supply UV Filter Time VCC Supply UV Reset Voltage VCC Supply UV Hysteresis Voltage VCC Supply UV Filter Time Output High Level Short Circuit Pulsed Current Output Low Level Short Circuit Pulsed Current Output High Level On resistance Output Low Level On resistance High Side Turn-On Propagation Delay High Side Turn-Off Propagation Delay High Side Turn-On Rise Time High Side Turn-Off Fall Time Low Side Turn-On Propagation Delay Low Side Turn-Off Propagation Delay Low Side Turn-On Rise Time Low Side Turn-Off Fall Time Delay Matching, High Side and Low Side Turn-On Delay Matching, High Side and Low Side Turn-Off Shutdown Propagation Delay Symbol Unit Parameter Test conditions Limits Min. Typ. Max. VB=VS=600V IO=0A, LO, HO IO=0A, LO, HO HIN, LIN HIN, LIN HIN, LIN (VDD=5V) HIN, LIN (VDD=5V) SD SD SD (VDD=5V) SD (VDD=5V) VIN=15V VIN=0V VO=0V, VIN=15V, PW<10 µs VO=15V, VIN=0V, PW<10 µs IO=–200mA, ROH=(VOH-VO)/IO IO=200mA, ROL=VO/IO CL=1000pF between HO – VS CL=1000pF between HO – VS CL=1000pF between HO – VS CL=1000pF between HO – VS CL=1000pF between LO – GND CL=1000pF between LO – GND CL=1000pF between LO – GND CL=1000pF between LO – GND |tdLH(HO)-tdLH(LO)| |tdHL(HO)-tdHL(LO)| CL=1000pF between HO – VS CL=1000pF between LO – GND IFS IBS ICC IDD VOH VOL VIH15 VIL15 VIH5 VIL5 VISDH15 VISDL15 VISDH5 VISDL5 IIH IIL VBSuvr VBSuvh tVBSuv VCCuvr VCCuvh tVCCuv IOH IOL ROH ROL tdLH(HO) tdHL(HO) trH tfH tdLH(LO) tdHL(LO) trL tfL ∆tdLH ∆tdHL tSD ELECTRICAL CHARACTERISTICS (Ta=25 °C, VCC=VBS (=VB–VS)=VDD=15V, LGND=0V unless otherwise specified) |
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