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CM200HA-24H Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor

Part No. CM200HA-24H
Description  HIGH POWER SWITCHING USE INSULATED TYPE
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
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CM200HA-24H Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor

   
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Sep.1998
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Symbol
CM600HU-12H
Units
Junction Temperature
Tj
-40 to 150
°C
Storage Temperature
Tstg
-40 to 125
°C
Collector-Emitter Voltage (G-E SHORT)
VCES
1200
Volts
Gate-Emitter Voltage (C-E SHORT)
VGES
±20
Volts
Collector Current (Tc = 25°C)
IC
200
Amperes
Peak Collector Current (Tj ≤ 150°C)
ICM
400*
Amperes
Emitter Current** (Tc = 25°C)
IE
200
Amperes
Peak Emitter Current**
IEM
400*
Amperes
Maximum Collector Dissipation (Tc = 25°C)
Pc
1500
Watts
Mounting Torque, M6 Main Terminal
1.96~2.94
N · m
Mounting Torque, M6 Mounting
1.96~2.94
N · m
Mounting Torque, M4 Terminal
0.98~1.47
N · m
Weight
400
Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Viso
2500
Vrms
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
ICES
VCE = VCES, VGE = 0V
1.0
mA
Gate Leakage Current
IGES
VGE = VGES, VCE = 0V
0.5
µA
Gate-Emitter Threshold Voltage
VGE(th)
IC = 20mA, VCE = 10V
4.5
6.0
7.5
Volts
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 200A, VGE = 15V
2.5
3.4**
Volts
IC = 200A, VGE = 15V, Tj = 150°C
2.25
Volts
Total Gate Charge
QG
VCC = 600V, IC = 200A, VGE = 15V
1000
nC
Emitter-Collector Voltage
VEC
IE = 200A, VGE = 0V
3.4
Volts
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Input Capacitance
Cies
40
nF
Output Capacitance
Coes
VGE = 0V, VCE = 10V
14
nF
Reverse Transfer Capacitance
Cres
8
nF
Resistive
Turn-on Delay Time
td(on)
250
ns
Load
Rise Time
tr
VCC = 600V, IC = 200A,
400
ns
Switching
Turn-off Delay Time
td(off)
VGE1 = VGE2 = 15V, RG = 1.6Ω
300
ns
Times
Fall Time
tf
350
ns
Diode Reverse Recovery Time
trr
IE = 200A, diE/dt = –400A/µs
250
ns
Diode Reverse Recovery Charge
Qrr
IE = 200A, diE/dt = –400A/µs
1.49
µC
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Junction to Case
Rth(j-c)
Per IGBT
0.085
°C/W
Thermal Resistance, Junction to Case
Rth(j-c)
Per FWDi
0.18
°C/W
Contact Thermal Resistance
Rth(c-f)
Per Module, Thermal Grease Applied
0.040
°C/W
MITSUBISHI IGBT MODULES
CM200HA-24H
HIGH POWER SWITCHING USE
INSULATED TYPE


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