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CM200HA-24H Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor

Part No. CM200HA-24H
Description  HIGH POWER SWITCHING USE INSULATED TYPE
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
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CM200HA-24H Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor

   
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Sep.1998
Dimensions
Inches
Millimeters
A
4.21
107.0
B
3.661
±0.01
93.0
±0.25
C
2.44
62.0
D
1.89
±0.01
48.0
±0.25
E
1.42 Max.
36.0 Max.
F
1.34
34.0
G
1.18
30.0
H
1.14
29.0
J
0.98 Max.
25.0 Max.
K
0.94
24.0
L
0.93
23.5
Dimensions
Inches
Millimeters
M
0.83
21.0
N
0.69
17.5
P
0.63
16.0
Q
0.51
13.0
R
0.43
11.0
S
0.35
9.0
T
0.28
7.0
U
0.12
3.0
V
0.26 Dia.
Dia. 6.5
W
M6 Metric
M6
X
M4 Metric
M4
Description:
Mitsubishi IGBT Modules
are designed for use in switching
applications. Each module con-
sists of one IGBT in a single con-
figuration with a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assem-
bly and thermal management.
Features:
Low Drive Power
Low VCE(sat)
Discrete Super-Fast Recovery
Free-Wheel Diode
High Frequency Operation
Isolated Baseplate for Easy
Heat Sinking
Applications:
AC Motor Control
Motion/Servo Control
UPS
Welding Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e.
CM200HA-24H is a 1200V (VCES),
200 Ampere Single IGBT Module.
Type
Current Rating
VCES
Amperes
Volts (x 50)
CM
200
24
Outline Drawing and Circuit Diagram
MITSUBISHI IGBT MODULES
CM200HA-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
E
C
E
G
E
E
G
C
CM
D
S
F
A
G
P
B
J
T
L
KK
U
V–DIA.(4 TYP.)
W–M6 THD.
(2 TYP.)
X–M4 THD.
(2 TYP.)
R
E
C
Q
M
H
N


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