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CM200HA-24H Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor |
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CM200HA-24H Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor |
1 / 4 page ![]() Sep.1998 Dimensions Inches Millimeters A 4.21 107.0 B 3.661 ±0.01 93.0 ±0.25 C 2.44 62.0 D 1.89 ±0.01 48.0 ±0.25 E 1.42 Max. 36.0 Max. F 1.34 34.0 G 1.18 30.0 H 1.14 29.0 J 0.98 Max. 25.0 Max. K 0.94 24.0 L 0.93 23.5 Dimensions Inches Millimeters M 0.83 21.0 N 0.69 17.5 P 0.63 16.0 Q 0.51 13.0 R 0.43 11.0 S 0.35 9.0 T 0.28 7.0 U 0.12 3.0 V 0.26 Dia. Dia. 6.5 W M6 Metric M6 X M4 Metric M4 Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module con- sists of one IGBT in a single con- figuration with a reverse- connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assem- bly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode High Frequency Operation Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Motion/Servo Control UPS Welding Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM200HA-24H is a 1200V (VCES), 200 Ampere Single IGBT Module. Type Current Rating VCES Amperes Volts (x 50) CM 200 24 Outline Drawing and Circuit Diagram MITSUBISHI IGBT MODULES CM200HA-24H HIGH POWER SWITCHING USE INSULATED TYPE E C E G E E G C CM D S F A G P B J T L KK U V–DIA.(4 TYP.) W–M6 THD. (2 TYP.) X–M4 THD. (2 TYP.) R E C Q M H N |