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CM200HA-24H Datasheet(PDF) 4 Page - Mitsubishi Electric Semiconductor

Part No. CM200HA-24H
Description  HIGH POWER SWITCHING USE INSULATED TYPE
Download  4 Pages
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
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CM200HA-24H Datasheet(HTML) 4 Page - Mitsubishi Electric Semiconductor

   
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Sep.1998
TIME, (s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
101
10-5
10-4
10-3
100
10-1
10-2
10-3
10-3
10-2
10-1
100
101
Single Pulse
TC = 25°C
Per Unit Base = Rth(j-c) = 0.085°C/W
10-1
10-2
10-3
TIME, (s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
101
10-5
10-4
10-3
100
10-1
10-2
10-3
10-3
10-2
10-1
100
101
Single Pulse
TC = 25°C
Per Unit Base = Rth(j-c) = 0.18°C/W
10-1
10-2
10-3
MITSUBISHI IGBT MODULES
CM200HA-24H
HIGH POWER SWITCHING USE
INSULATED TYPE


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