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BF1102 Datasheet(PDF) 4 Page - NXP Semiconductors

Part No. BF1102
Description  Dual N-channel dual gate MOS-FET
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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BF1102 Datasheet(HTML) 4 Page - NXP Semiconductors

 
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1999 Jul 08
4
Philips Semiconductors
Preliminary specification
Dual N-channel dual gate MOS-FET
BF1102
STATIC CHARACTERISTICS
Tj =25
°C unless otherwise specified.
Notes
1.
RG1 connects gate 1 to VGG =5V.
DYNAMIC CHARACTERISTICS
Common source; Tamb =25
°C; VG2-S =4V; VDS =5V; ID = 15 mA; unless otherwise specified.
Notes
1.
Not used MOS-FET: VG1-S =0; VDS =0.
2.
Measured in test circuit of Fig.17.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per MOS-FET unless otherwise specified
V(BR)DSS
drain-source breakdown voltage
VG1-S =VG2-S =0; ID =10
µA7
V
V(BR)G1-SS
gate-source breakdown voltage
VGS =VDS =0; IG1-S =10mA
6
15
V
V(BR)G2-SS
gate-source breakdown voltage
VGS =VDS =0; IG2-S =5mA
6
15
V
V(F)S-G1
forward source-gate voltage
VG2-S =VDS =0; IS-G1 =
−10 mA
0.5
1.5
V
V(F)S-G2
forward source-gate voltage
VG1-S =VDS =0; IS-G2 =
−10 mA
0.5
1.5
V
VG1-S(th)
gate-source threshold voltage
VDS =5V; VG2-S =4 V; ID =20
µA0.3
1
V
VG2-S(th)
gate-source threshold voltage
VDS =5V; VG1-S =4 V; ID =20
µA0.3
1.2
V
IDSX
drain-source current
VG2-S =4V; VDS =5 V; RG = 120 k
Ω; note 1 12
20
mA
IG1-S
gate cut-off current
VG1-S =5V; VG2-S =VDS =0
50
nA
IG2-S
gate cut-off current
VG2-S =5V; VG1-S =VDS =0
20
nA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per MOS-FET unless otherwise specified (note 1)
yfs
forward transfer admittance
Tj =25
°C
3643
50mS
Cig1-ss
input capacitance at gate 1
f = 1 MHz
2
2.8
3.6
pF
Cig2-ss
input capacitance at gate 2
f = 1 MHz
−−
7pF
Coss
output capacitance
f = 1 MHz
1.6
2.5
pF
Crss
reverse transfer capacitance f = 1 MHz
30
50
fF
F
noise figure
f = 800 MHz; YS =YSopt
22.8
dB
Xmod
cross-modulation
input level for k = 1% at 0 dB AGC;
fw =50MHz; funw =60MHz; (note2)
85
−−
dB
µV
input level for k = 1% at 40 dB AGC;
fw =50MHz; funw =60MHz; (note2)
100
−−
dB
µV


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