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BF1102 Datasheet(PDF) 3 Page - NXP Semiconductors

Part No. BF1102
Description  Dual N-channel dual gate MOS-FET
Download  12 Pages
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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BF1102 Datasheet(HTML) 3 Page - NXP Semiconductors

 
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1999 Jul 08
3
Philips Semiconductors
Preliminary specification
Dual N-channel dual gate MOS-FET
BF1102
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per MOS-FET unless otherwise specified
VDS
drain-source voltage
7V
ID
drain current (DC)
40
mA
IG1
gate 1 current
−±10
mA
IG2
gate 2 current
−±10
mA
Ptot
total power dissipation
Ts
≤ 102 °C
200
mW
Tstg
storage temperature
−65
+150
°C
Tj
operating junction temperature
+150
°C
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point
240
K/W
Fig.2 Power derating curve.
handbook, halfpage
0
50
100
200
250
0
200
MGS359
150
150
100
50
Ts (°C)
Ptot
(mW)


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