Electronic Components Datasheet Search |
|
BF1100 Datasheet(PDF) 8 Page - NXP Semiconductors |
|
BF1100 Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 14 page 1995 Apr 25 8 Philips Semiconductors Product specification Dual-gate MOS-FETs BF1100; BF1100R Fig.15 Gate 1 current as a function of gate 2 voltage; typical values. VDS =9V. RG1 = 180 kΩ (connected to VGG). Tj =25 °C. handbook, halfpage 02 46 50 40 30 10 0 20 MLD167 I G1 ( µA) V (V) G2 S 8 V 7 V 6 V 5 V 4 V V = 9 V GG Fig.16 Gate 1 current as a function of gate 2 voltage; typical values. VDS =12V. RG1 = 250 kΩ (connected to VGG). Tj =25 °C. handbook, halfpage 02 46 50 40 30 10 0 20 MLD168 I G1 ( µA) V (V) G2 S 11 V 10 V 9 V 8 V 7 V V = 12 V GG Fig.17 Drain current as a function of the gate 2 voltage; typical values; see Fig.27. VDS =9V. RG1 = 180 kΩ (connected to VGG). Tj =25 °C. handbook, halfpage 024 6 0 16 MLD169 12 8 4 I D (mA) 8 V 7 V 6 V 5 V 4 V V = 9 V GG V (V) G2 S VDS =12V. RG1 = 250 kΩ (connected to VGG). Tj =25 °C. Fig.18 Drain current as a function of the gate 2 voltage; typical values; see Fig.27. handbook, halfpage 024 6 0 16 MLD170 12 8 4 I D (mA) 11 V 10 V 9 V 8 V 7 V V = 12 V GG V (V) G2 S |
Similar Part No. - BF1100 |
|
Similar Description - BF1100 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |