1999 Apr 12

2

Philips Semiconductors

Product specification

NPN power transistor

BD131

FEATURES

• High current (max. 3 A)

• Low voltage (max. 45 V).

APPLICATIONS

• General purpose power applications.

DESCRIPTION

NPN power transistor in a TO-126; SOT32 plastic

package. PNP complement: BD132.

PINNING

PIN

DESCRIPTION

1

emitter

2

collector, connected to metal part of

mounting surface

3

base

Fig.1

Simplified outline (TO-126; SOT32)

and symbol.

handbook, halfpage

MAM254

12

3

Top view

1

2

3

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

−

70

V

collector-emitter voltage

open base

−

45

V

emitter-base voltage

open collector

−

6V

collector current (DC)

−

3A

peak collector current

−

6A

peak base current

−

0.5

A

total power dissipation

−

15

W

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C