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BD131 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BD131 Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 1999 Apr 12 2 Philips Semiconductors Product specification NPN power transistor BD131 FEATURES • High current (max. 3 A) • Low voltage (max. 45 V). APPLICATIONS • General purpose power applications. DESCRIPTION NPN power transistor in a TO-126; SOT32 plastic package. PNP complement: BD132. PINNING PIN DESCRIPTION 1 emitter 2 collector, connected to metal part of mounting surface 3 base Fig.1 Simplified outline (TO-126; SOT32) and symbol. handbook, halfpage MAM254 12 3 Top view 1 2 3 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 70 V VCEO collector-emitter voltage open base − 45 V VEBO emitter-base voltage open collector − 6V IC collector current (DC) − 3A ICM peak collector current − 6A IBM peak base current − 0.5 A Ptot total power dissipation Tmb ≤ 60 °C − 15 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C |
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