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BCY70 Datasheet(PDF) 4 Page - NXP Semiconductors |
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BCY70 Datasheet(HTML) 4 Page - NXP Semiconductors |
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1997 Jul 11 4 Philips Semiconductors Product specification PNP general purpose transistors BCY70; BCY71 CHARACTERISTICS Tj =25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current BCY70 IE = 0; VCB = −50 V −−20 nA IE = 0; VCB = −50 V; Tj = 100 °C −−5 µA ICBO collector cut-off current BCY71 IE = 0; VCB = −45 V −−20 nA IE = 0; VCB = −45 V; Tj = 100 °C −−5 µA IEBO emitter cut-off current IC = 0; VEB = −4V −−10 nA IC = 0; VEB = −4 V; Tj = 100 °C −−2 µA IC = 0; VEB = −5V −−500 nA hFE DC current gain VCE = −1V IC = −10 µA60 − IC = −0.1 mA 80 − IC = −1 mA 100 − IC = −50 mA 45 − hFE DC current gain IC = −10 mA; VCE = −1V BCY70 100 − BCY71 − 500 VCEsat collector-emitter saturation voltage IC = −10 mA; IB = −1mA −−250 mV IC = −50 mA; IB = −5mA −−500 mV VBEsat base-emitter saturation voltage IC = −10 mA; IB = −1mA −600 −900 mV IC = −50 mA; IB = −5mA −−1.2 V Cc collector capacitance IE =ie = 0; VCB = −10 V; f = 1 MHz − 6pF Ce emitter capacitance IC =ic = 0; VEB = −1 V; f = 1 MHz − 8pF fT transition frequency IC = −10 mA; VCE = −20 V; f = 100 MHz 250 − MHz F noise figure IC = −100 µA; VCE = −5 V; RS =1kΩ; f = 10 Hz to 15.7 kHz BCY70 − 6dB BCY71 − 2dB Switching times (between 10% and 90% levels) BCY70 ton turn-on time ICon = −10 mA; IBon = −1 mA; IBoff =1mA − 65 ns td delay time − 35 ns tr rise time − 35 ns toff turn-off time − 500 ns ts storage time − 420 ns tf fall time − 80 ns |
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