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BCY70 Datasheet(PDF) 4 Page - NXP Semiconductors

Part No. BCY70
Description  PNP general purpose transistors
Download  8 Pages
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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BCY70 Datasheet(HTML) 4 Page - NXP Semiconductors

   
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1997 Jul 11
4
Philips Semiconductors
Product specification
PNP general purpose transistors
BCY70; BCY71
CHARACTERISTICS
Tj =25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
BCY70
IE = 0; VCB = −50 V
−−20
nA
IE = 0; VCB = −50 V; Tj = 100 °C
−−5
µA
ICBO
collector cut-off current
BCY71
IE = 0; VCB = −45 V
−−20
nA
IE = 0; VCB = −45 V; Tj = 100 °C
−−5
µA
IEBO
emitter cut-off current
IC = 0; VEB = −4V
−−10
nA
IC = 0; VEB = −4 V; Tj = 100 °C
−−2
µA
IC = 0; VEB = −5V
−−500
nA
hFE
DC current gain
VCE = −1V
IC = −10 µA60
IC = −0.1 mA
80
IC = −1 mA
100
IC = −50 mA
45
hFE
DC current gain
IC = −10 mA; VCE = −1V
BCY70
100
BCY71
500
VCEsat
collector-emitter saturation voltage
IC = −10 mA; IB = −1mA
−−250
mV
IC = −50 mA; IB = −5mA
−−500
mV
VBEsat
base-emitter saturation voltage
IC = −10 mA; IB = −1mA
−600
−900
mV
IC = −50 mA; IB = −5mA
−−1.2
V
Cc
collector capacitance
IE =ie = 0; VCB = −10 V; f = 1 MHz
6pF
Ce
emitter capacitance
IC =ic = 0; VEB = −1 V; f = 1 MHz
8pF
fT
transition frequency
IC = −10 mA; VCE = −20 V; f = 100 MHz
250
MHz
F
noise figure
IC = −100 µA; VCE = −5 V; RS =1kΩ;
f = 10 Hz to 15.7 kHz
BCY70
6dB
BCY71
2dB
Switching times (between 10% and 90% levels)
BCY70
ton
turn-on time
ICon = −10 mA; IBon = −1 mA; IBoff =1mA −
65
ns
td
delay time
35
ns
tr
rise time
35
ns
toff
turn-off time
500
ns
ts
storage time
420
ns
tf
fall time
80
ns


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