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BCY70 Datasheet(PDF) 3 Page - NXP Semiconductors

Part No. BCY70
Description  PNP general purpose transistors
Download  8 Pages
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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BCY70 Datasheet(HTML) 3 Page - NXP Semiconductors

   
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1997 Jul 11
3
Philips Semiconductors
Product specification
PNP general purpose transistors
BCY70; BCY71
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
BCY70
−−50
V
BCY71
−−45
V
VCEO
collector-emitter voltage
open base
BCY70
−−40
V
BCY71
−−45
V
VEBO
emitter-base voltage
open collector
−−5V
IC
collector current (DC)
−−200
mA
ICM
peak collector current
−−200
mA
IBM
peak base current
−−100
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
350
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
200
°C
Tamb
operating ambient temperature
−65
+150
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient in free air
500
K/W
Rth j-c
thermal resistance from junction to case
150
K/W


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