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BCX71 Datasheet(PDF) 3 Page - NXP Semiconductors

Part No. BCX71
Description  PNP general purpose transistors
Download  8 Pages
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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BCX71 Datasheet(HTML) 3 Page - NXP Semiconductors

   
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1999 Apr 20
3
Philips Semiconductors
Product specification
PNP general purpose transistors
BCX71 series
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb =25 °C unless otherwise specified.
Note
1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = −45 V
−−−20
nA
IE = 0; VCB = −45 V; Tamb = 150 °C
−−−20
µA
IEBO
emitter cut-off current
IC = 0; VEB = −4V
−−−20
nA
hFE
DC current gain
IC = −10 µA; VCE = −5V
BCX71G
−−−
BCX71H
30
−−
BCX71J
40
−−
BCX71K
100
−−
DC current gain
IC = −2 mA; VCE = −5V
BCX71G
120
220
BCX71H
180
310
BCX71J
250
460
BCX71K
380
630
DC current gain
IC = −50 mA; VCE = −1 V; note 1
BCX71G
60
−−
BCX71H
80
−−
BCX71J
100
−−
BCX71K
110
−−
VCEsat
collector-emitter saturation
voltage
IC = −10 mA; IB = −0.25 mA
−60
−−250
mV
IC = −50 mA; IB = −1.25 mA; note 1
−120
−−550
mV
VBEsat
base-emitter saturation
voltage
IC = −10 mA; IB = −0.25 mA
−600
−−850
mV
IC = −50 mA; IB = −1.25 mA; note 1
−680
−−1050 mV
VBE
base-emitter voltage
IC = −2 mA; VCE = −5V
−600
−650
−750
mV
IC = −10 µA; VCE = −5V
−−550
mV
IC = −50 mA; VCE = −1 V; note 1
−−720
mV
Cc
collector capacitance
IE =Ie = 0; VCB = −10 V; f = 1 MHz
4.5
pF
Ce
emitter capacitance
IC =Ic = 0; VEB = −0.5 V; f = 1 MHz
11
pF
fT
transition frequency
IC = −10 mA; VCE = −5 V; f = 100 MHz 100
−−
MHz
F
noise figure
IC = −200 µA; VCE = −5 V; RS =2kΩ;
f = 1 kHz; B = 200 Hz
26dB


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