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BCX51-10 Datasheet(PDF) 4 Page - NXP Semiconductors

Part # BCX51-10
Description  PNP medium power transistors
Download  8 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BCX51-10 Datasheet(HTML) 4 Page - NXP Semiconductors

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1999 Apr 19
4
Philips Semiconductors
Product specification
PNP medium power transistors
BCX51; BCX52; BCX53
CHARACTERISTICS
Tamb =25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
ICBO
collector cut-off current
IE = 0; VCB = −30 V
−−−100 nA
IE = 0; VCB = −30 V; Tj = 125 °C
−−−10
µA
IEBO
emitter cut-off current
IC = 0; VEB = −5V
−−−100 nA
hFE
DC current gain
VCE = −2 V; see Fig.2
IC = −5mA
40
−−
IC = −150 mA
63
250
IC = −500 mA
25
−−
DC current gain
IC = −150 mA; VCE = −2 V; see Fig.2
BCX51-10; BCX52-10; BCX53-10
63
160
BCX51-16; BCX52-16; BCX53-16
100
250
VCEsat
collector-emitter saturation voltage
IC = −500 mA; IB = −50 mA
−−−500 mV
VBE
base-emitter voltage
IC = −500 mA; VCE = −2V
−−−1V
fT
transition frequency
IC = −10 mA; VCE = −5 V; f = 100 MHz −
50
MHz
Fig.2 DC current gain; typical values.
handbook, full pagewidth
0
160
80
120
40
MBH730
−10−1
hFE
−1
IC (mA)
−10
−103
−104
−102
VCE = −2 V


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