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BCX17 Datasheet(PDF) 3 Page - NXP Semiconductors

Part No. BCX17
Description  PNP general purpose transistors
Download  8 Pages
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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BCX17 Datasheet(HTML) 3 Page - NXP Semiconductors

   
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1999 May 31
3
Philips Semiconductors
Product specification
PNP general purpose transistors
BCX17; BCX18
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj =25 °C unless otherwise specified.
Note
1. VBE decreases by approximately −2 mV/°C with increasing temperature.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = −20 V
−−−100 nA
IE = 0; VCB = −20 V; Tj = 150 °C
−−−5
µA
IEBO
emitter cut-off current
IC = 0; VEB = −5V
−−−100 nA
hFE
DC current gain
IC = −100 mA; VCE = −1 V
100
600
IC = −300 mA; VCE = −1V
70
−−
IC = −500 mA; VCE = −1V
40
−−
VCEsat
collector-emitter saturation
voltage
IC = −500 mA; IB = −50 mA
−−−620 mV
VBE
base-emitter voltage
IC = −500 mA; VCE = −1 V; note 1
−−−1.2
V
Cc
collector capacitance
IE =Ie = 0; VCB = −10 V; f = 1 MHz
9
pF
fT
transition frequency
IC = −10 mA; VCE = −5 V; f = 100 MHz 80
−−
MHz


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