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BCW69 Datasheet(PDF) 2 Page - NXP Semiconductors

Part No. BCW69
Description  PNP general purpose transistors
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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BCW69 Datasheet(HTML) 2 Page - NXP Semiconductors

   
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1999 Apr 19
2
Philips Semiconductors
Product specification
PNP general purpose transistors
BCW69; BCW70
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 45 V).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complements: BCW71 and BCW72.
MARKING
Note
1.
∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
TYPE NUMBER
MARKING CODE(1)
BCW69
H1
BCW70
H2
PINNING
PIN
DESCRIPTION
1
base
2
emitter
3
collector
Fig.1 Simplified outline (SOT23) and symbol.
handbook, halfpage
2
1
3
MAM256
Top view
2
3
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−−50
V
VCEO
collector-emitter voltage
open base; IC = −2mA
−−45
V
VEBO
emitter-base voltage
open collector
−−5V
IC
collector current (DC)
−−100
mA
ICM
peak collector current
−−200
mA
IBM
peak base current
−−200
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
250
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
−65
+150
°C


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