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SUM60N06-15 Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. SUM60N06-15
Description  N-Channel 60-V (D-S) 175C MOSFET
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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SUM60N06-15 Datasheet(HTML) 2 Page - Vishay Siliconix

   
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SUM60N06-15
Vishay Siliconix
www.vishay.com
2
Document Number: 72080
S-32406—Rev. B, 24-Nov-03
SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V(BR)DSS
VDS = 0 V, ID = 250 mA
60
V
Gate-Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 mA
2
4
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
"100
nA
VDS = 60 V, VGS = 0 V
1
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V, TJ = 125_C
50
mA
g
DSS
VDS = 60 V, VGS = 0 V, TJ = 175_C
250
m
On-State Drain Currenta
ID(on)
VDS w 5 V, VGS = 10 V
100
A
VGS = 10 V, ID = 30 A
0.012
0.015
Drain-Source On-State Resistancea
rDS(on)
VGS = 10 V, ID = 30 A, TJ = 125_C
0.025
W
DS(on)
VGS = 10 V, ID = 30 A, TJ = 175_C
0.030
Forward Transconductancea
gfs
VDS = 15 V, ID = 30 A
20
S
Dynamicb
Input Capacitance
Ciss
2100
Output Capacitance
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
300
pF
Reverse Transfer Capacitance
Crss
125
Total Gate Chargec
Qg
30
45
Gate-Source Chargec
Qgs
VDS = 30 V, VGS = 10 V, ID = 60 A
11
nC
Gate-Drain Chargec
Qgd
DS
, GS
, D
8
Turn-On Delay Timec
td(on)
10
15
Rise Timec
tr
VDD = 30 V, RL = 0.5 W
12
20
ns
Turn-Off Delay Timec
td(off)
VDD = 30 V, RL = 0.5 W
ID ^ 60 A, VGEN = 10 V, RG = 2.5 W
20
30
ns
Fall Timec
tf
10
15
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current
IS
110
A
Pulsed Current
ISM
300
A
Forward Voltagea
VSD
IF = 30 A, VGS = 0 V
1.1
1.5
V
Reverse Recovery Time
trr
I
60 A di/dt 100 A/
50
85
ns
Peak Reverse Recovery Current
IRM(REC)
IF = 60 A, di/dt = 100 A/ms
2
4
A
Reverse Recovery Charge
Qrr
0.05
0.17
mC
Notes
a.
Pulse test; pulse width v 300 ms, duty cycle v 2%.
b.
Guaranteed by design, not subject to production testing.
c.
Independent of operating temperature.


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