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LM3207 Datasheet(PDF) 5 Page - National Semiconductor (TI) |
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LM3207 Datasheet(HTML) 5 Page - National Semiconductor (TI) |
5 / 19 page System Characteristics The following spec table entries are guaranteed by design providing the component values in the typical application circuit are used (L = 3.0µH, (DCR = 0.12 Ω, FDK MIPW3226D3R0M); C IN = 10µF, (6.3V, 0805, TDK C2012X5R0J106K); COUT = 4.7µF, (6.3V, 0603, TDK C1608X5R0J475M); CLDO = 100nF, (10V, 0402, TDK C1005X5R1A104KT) (or 220nF, (6.3V, 0402, TDK C1005X5R0J224KT))) . These parameters are not guaranteed by production testing. Min and Max values are specified over the V IN range = 2.7V to 5.5V and over the ambi- ent temp range T A = −30˚C to 85˚C unless otherwise specified. Typical values are specified at PVIN = EN = 3.6V and TA = 25˚C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Units LDO PSRR Power Supply Rejection Ratio Offset Freq = 1Khz, C out = 100nF, I out = 1mA, PVin = Vout(nom) + 0.5V 50 dB V LDO(NOISE) Output Noise Voltage BW = 10Hz to 100Khz, I out = 1mA 30 uVrms t LDO, ON Time to reach 90% of V LDO(nom) after EN LDO signal goes high. C LDO = 100nF, PWM mode assumed to be fully functional before EN LDO goes high. PV in =3V, Iout=5mA (Note 12) 3uS C LDO = 220nF, PWM mode assumed to be fully functional before EN LDO goes high. PV in =3V, Iout=5mA (Note 12) 5uS t LDO, OFF Time to reach 10% of V LDO(nom) after EN LDO signal goes low. C LDO = 100nF, PVin = 3V, Iout = 0mA (Note 12) 3 uS C LDO = 220nF, PVin = 3V, Iout = 0mA (Note 12) 5 Switcher T RESPONSE (Rise time) Time for V OUT to rise from 0.8V to 3.6V PV IN = 4.2V, COUT = 4.7uF, L = 3.0uH, R LOAD = 5.5 Ω 20 30 µs T RESPONSE (Fall time) Time for V OUT to fall from 3.6V to 0.8V PV IN = 4.2V, COUT = 4.7uF, L = 3.0uH, R LOAD =10 Ω 20 30 µs C CON V CON input capacitance V CON = 1V, Test frequency = 100 kHz 20 pF V CON Linearity Linearity in control range 0.32V to 1.44V PV IN = 3.9V, Monotonic in nature -3 +3 % T _ON Turn on time (time for output to reach 3.6V from Enable low to high transition) EN = Low to High, PV IN = 4.2V, V O = 3.6V, COUT = 4.7µF, I OUT ≤ 1mA 70 100 µs η Efficiency (L = 3.0µH, DCR ≤ 100m Ω) PV IN = 3.6V, VOUT = 0.8V, IOUT = 90mA 81 % PV IN = 3.9V, VOUT = 3.4V, IOUT = 400mA 95 % V O_ripple Ripple voltage, PWM mode PV IN = 3V to 4.5V, VOUT = 0.8V, I OUT = 10mA to 400mA, (Note 11) 10 mVp-p Line_tr Line transient response PV IN = 600mV perturbance, T RISE =TFALL = 10µs, VOUT = 0.8V, I OUT = 100mA 50 mV Load_tr Load transient response PV IN = 3.1/3.6/4.5V, VOUT = 0.8V, transients up to 100mA, T RISE =TFALL = 10µs 50 mV Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the component may occur. Operating Ratings are conditions under which operation of the device is guaranteed. Operating Ratings do not imply guaranteed performance limits. For guaranteed performance limits and associated test conditions, see the Electrical Characteristics tables. Note 2: All voltages are with respect to the potential at the GND pins. The LM3207 is designed for mobile phone applications where turn-on after power-up is controlled by the system controller and where requirements for a small package size overrule increased die size for internal Under Voltage Lock-Out (UVLO) circuitry. Thus, it should be kept in shutdown by holding the EN pin low until the input voltage exceeds 2.7V. Note 3: Internal thermal shutdown circuitry protects the device from permanent damage. Thermal shutdown engages at TJ = 150˚C (typ.) and disengages at TJ = 130˚C (typ.). Note 4: In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may have to be de-rated. Maximum ambient temperature (TA-MAX) is dependent on the maximum operating junction temperature (TJ-MAX-OP = 125˚C), the maximum power dissipation of the device in the application (PD-MAX), and the junction-to ambient thermal resistance of the part/package in the application (θJA), as given by the following equation: TA-MAX =TJ-MAX-OP –(θJA xPD-MAX). www.national.com 5 |
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