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BCF81 Datasheet(PDF) 3 Page - NXP Semiconductors

Part No. BCF81
Description  NPN general purpose transistor
Download  8 Pages
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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BCF81 Datasheet(HTML) 3 Page - NXP Semiconductors

   
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1997 Sep 03
3
Philips Semiconductors
Product specification
NPN general purpose transistor
BCF81
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj =25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
50
V
VCEO
collector-emitter voltage
open base
45
V
VEBO
emitter-base voltage
open collector
5V
IC
collector current (DC)
100
mA
ICM
peak collector current
200
mA
IBM
peak base current
100
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
250
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
−65
+150
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB =20V
−−
100
nA
IE = 0; VCB = 20 V; Tj = 100 °C
−−
10
µA
IEBO
emitter cut-off current
IC = 0; VEB =5V
−−
100
nA
hFE
DC current gain
IC = 2 mA; VCE = 5 V
420
800
VCEsat
collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA
120
250
mV
IC = 50 mA; IB = 2.5 mA
210
mV
VBEsat
base-emitter saturation voltage
IC = 10 mA; IB = 0.5 mA
750
mV
IC = 50 mA; IB = 2.5 mA
850
mV
VBE
base-emitter voltage
IC = 2 mA; VCE = 5 V
550
700
mV
Cc
collector capacitance
IE =ie = 0; VCB = 10 V; f = 1 MHz
2.5
pF
fT
transition frequency
IC = 10 mA; VCE = 5 V; f = 100 MHz
100
−−
MHz
F
noise figure
IC = 200 µA; VCE =5V; RS =2kΩ;
f = 1 kHz; B = 200 Hz
1.2
4
dB


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