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BC846 Datasheet(PDF) 7 Page - NXP Semiconductors |
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BC846 Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 10 page 2004 Feb 06 7 Philips Semiconductors Product specification NPN general purpose transistors BC846; BC847; BC848 handbook, halfpage MGT731 10−1 110 102 103 IC (mA) 0 1200 1000 800 600 400 200 hFE (1) (2) (3) Fig.10 DC current gain as a function of collector current; typical values. BC847C; VCE =5V. (1) Tamb = 150 °C. (2) Tamb =25 °C. (3) Tamb = −55 °C. handbook, halfpage 0 1200 1000 800 600 400 200 MGT732 10−2 10−1 110 102 103 IC (mA) VBE (mV) (1) (2) (3) Fig.11 Base-emitter voltage as a function of collector current; typical values. BC847C; VCE =5V. (1) Tamb = −55 °C. (2) Tamb =25 °C. (3) Tamb = 150 °C. handbook, halfpage 104 103 102 10 MGT733 10−1 110 102 103 IC (mA) VCEsat (mV) (1) (2) (3) Fig.12 Collector-emitter saturation voltage as a function of collector current; typical values. BC847C; IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb =25 °C. (3) Tamb = −55 °C. handbook, halfpage MGT734 10−1 110 102 103 IC (mA) 0 1200 1000 800 600 400 200 VBEsat (mV) (1) (2) (3) Fig.13 Base-emitter saturation voltage as a function of collector current; typical values. BC847C; IC/IB = 10. (1) Tamb = −55 °C. (2) Tamb =25 °C. (3) Tamb = 150 °C. |
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