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CM200E3U-12H Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor

Part No. CM200E3U-12H
Description  HIGH POWER SWITCHING USE INSULATED TYPE
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
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CM200E3U-12H Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor

   
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Sep.1998
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Junction to Case
Rth(j-c)Q
Per IGBT
0.19
°C/W
Thermal Resistance, Junction to Case
Rth(j-c)D
Per FWDi
0.35
°C/W
Thermal Resistance, Junction to Case
Rth(j-c)
Clamp Diode Part
0.35
°C/W
Contact Thermal Resistance
Rth(c-f)
Per Module, Thermal Grease Applied
0.035
°C/W
COLLECTOR-EMITTER VOLTAGE, V
CE, (VOLTS)
OUTPUT CHARACTERISTICS
(TYPICAL)
02468
10
200
100
0
VGE = 20V
15
13
12
11
8
Tj = 25
oC
300
400
500
10
9
14
GATE-EMITTER VOLTAGE, V
GE, (VOLTS)
TRANSFER CHARACTERISTICS
(TYPICAL)
0
4
8
12
16
20
300
100
0
200
400
VCE = 10V
Tj = 25°C
Tj = 125°C
COLLECTOR-CURRENT, I
C, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
0
100
200
300
400
4
3
2
1
0
500
VGE = 15V
Tj = 25°C
Tj = 125°C
GATE-EMITTER VOLTAGE, V
GE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
0
4
8
12
16
20
8
6
4
2
0
Tj = 25°C
IC = 80A
IC = 400A
IC = 200A
0.6
1.0
1.4
1.8
2.6
2.2
3.0
101
102
EMITTER-COLLECTOR VOLTAGE, V
EC, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
103
Tj = 25°C
COLLECTOR-EMITTER VOLTAGE, V
CE, (VOLTS)
CAPACITANCE VS. VCE
(TYPICAL)
10-1
100
102
102
101
100
10-1
VGE = 0V
101
Cies
Coes
Cres
MITSUBISHI IGBT MODULES
CM200E3U-12H
HIGH POWER SWITCHING USE
INSULATED TYPE


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