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CM200E3U-12H Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor

Part No. CM200E3U-12H
Description  HIGH POWER SWITCHING USE INSULATED TYPE
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
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CM200E3U-12H Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor

   
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Sep.1998
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Symbol
CM200E3U-12H
Units
Junction Temperature
Tj
-40 to 150
°C
Storage Temperature
Tstg
-40 to 125
°C
Collector-Emitter Voltage (G-E SHORT)
VCES
600
Volts
Gate-Emitter Voltage (C-E SHORT)
VGES
±20
Volts
Collector Current (Tc = 25°C)
IC
200
Amperes
Peak Collector Current
ICM
400*
Amperes
Emitter Current** (Tc = 25°C)
IE
200
Amperes
Peak Emitter Current**
IEM
400*
Amperes
Maximum Collector Dissipation (Tc = 25°C, Tj 150°C)
Pc
650
Watts
Mounting Torque, M5 Main Terminal
2.5~3.5
N · m
Mounting Torque, M6 Mounting
3.5~4.5
N · m
Weight
310
Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Viso
2500
Vrms
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
ICES
VCE = VCES, VGE = 0V
1
mA
Gate Leakage Voltage
IGES
VGE = VGES, VCE = 0V
0.5
µA
Gate-Emitter Threshold Voltage
VGE(th)
IC = 20mA, VCE = 10V
4.5
6
7.5
Volts
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 200A, VGE = 15V, Tj = 25°C
2.4
3.0
Volts
IC = 200A, VGE = 15V, Tj = 125°C
2.6
Volts
Total Gate Charge
QG
VCC = 300V, IC = 200A, VGE = 15V
400
nC
Emitter-Collector Voltage**
VEC
IE = 200A, VGE = 0V
2.6
Volts
Emitter-Collector Voltage
VFM
IF = 200A, Clamp Diode Part
2.6
Volts
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Input Capacitance
Cies
17.6
nF
Output Capacitance
Coes
VCE = 10V, VGE = 0V
9.6
nF
Reverse Transfer Capacitance
Cres
2.6
nF
Resistive
Turn-on Delay Time
td(on)
VCC = 300V, IC = 200A,
150
ns
Load
Rise Time
tr
VGE1 = VGE2 = 15V,
400
ns
Switch
Turn-off Delay Time
td(off)
RG = 3.1Ω, Resistive
300
ns
Times
Fall Time
tf
Load Switching Operation
300
ns
Diode Reverse Recovery Time**
trr
IE = 200A, diE/dt = -400A/µs
160
ns
Diode Reverse Recovery Charge**
Qrr
IE = 200A, diE/dt = -400A/µs
0.48
µC
Diode Reverse Recovery Time
trr
IF = 200A, Clamp Diode Part
160
ns
Diode Reverse Recovery Charge
Qrr
diF/dt = -400A/µs
0.48
µC
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
MITSUBISHI IGBT MODULES
CM200E3U-12H
HIGH POWER SWITCHING USE
INSULATED TYPE


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