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CM200E3U-12H Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor |
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CM200E3U-12H Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor |
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Sep.1998 Dimensions Inches Millimeters A 3.7 94.0 B 3.15±0.01 80.0±0.25 C 1.89 48.0 D 0.94 24.0 E 0.28 7.0 F 0.67 17.0 G 0.91 23.0 H 0.91 23.0 J 0.43 11.0 L 0.16 4.0 Dimensions Inches Millimeters M 0.47 12.0 N 0.53 13.5 O 0.1 2.5 P 0.63 16.0 Q 0.98 25.0 R 1.18 +0.04/-0.02 30.0 +1.0/-0.5 S 0.3 7.5 T 0.83 21.2 U 0.16 4.0 V 0.51 13.0 Description: Mitsubishi IGBT Modules are de- signed for use in switching applica- tions. Each module consists of one IGBT having a reverse-connected super-fast recovery free-wheel di- ode and an anode-collector con- nected super-fast recovery free- wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management . Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode High Frequency Operation Isolated Baseplate for Easy Heat Sinking Application: Brake Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM200E3U-12H is a 600V (VCES), 200 Ampere IGBT Module. Current Rating VCES Type Amperes Volts (x 50) CM 200 12 MITSUBISHI IGBT MODULES CM200E3U-12H HIGH POWER SWITCHING USE INSULATED TYPE Outline Drawing and Circuit Diagram E2 E2 G2 C1 C2E1 A G F V 2 - Mounting Holes (6.5 Dia.) E U H E2 C1 C2E1 C 3-M5 Nuts D B J L N M P P Q O O TC Measured Point R S T TAB#110 t=0.5 |
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