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BC337 Datasheet(PDF) 3 Page - NXP Semiconductors

Part # BC337
Description  NPN general purpose transistor
Download  8 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BC337 Datasheet(HTML) 3 Page - NXP Semiconductors

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1999 Apr 15
3
Philips Semiconductors
Product specification
NPN general purpose transistor
BC337
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj =25 °C unless otherwise specified.
Note
1. VBE decreases by about 2 mV/K with increasing temperature.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
0.2
K/mW
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB =20V
−−
100
nA
IE = 0; VCB = 20 V; Tj = 150 °C
−−
5
µA
IEBO
emitter cut-off current
IC = 0; VEB =5V
−−
100
nA
hFE
DC current gain
IC = 100 mA; VCE =1V;
see Figs 2, 3 and 4
BC337
100
600
BC337-16
100
250
BC337-25
160
400
BC337-40
250
600
DC current gain
IC = 500 mA; VCE =1V;
see Figs 2, 3 and 4
40
−−
VCEsat
collector-emitter saturation
voltage
IC = 500 mA; IB =50mA
−−
700
mV
VBE
base-emitter voltage
IC = 500 mA; VCE = 1 V; note 1
−−
1.2
V
Cc
collector capacitance
IE =ie = 0; VCB = 10 V; f = 1 MHz
5
pF
fT
transition frequency
IC = 10 mA; VCE = 5 V; f = 100 MHz
100
−−
MHz


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