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BC307 Datasheet(PDF) 4 Page - NXP Semiconductors

Part No. BC307
Description  PNP general purpose transistors
Download  8 Pages
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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BC307 Datasheet(HTML) 4 Page - NXP Semiconductors

   
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1997 Mar 07
4
Philips Semiconductors
Product specification
PNP general purpose transistors
BC307; BC307B
CHARACTERISTICS
Tamb =25 °C unless otherwise specified.
Note
1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = −30 V;
−−15
nA
IE = 0; VCB = −30 V; Tj = 150 °C
−−4
µA
IEBO
emitter cut-off current
IC = 0; VEB = −4V
−−15
nA
hFE
DC current gain
IC = −2 mA; VCE = −5 V; see Fig.2
BC307
125
455
BC307B
222
455
VCEsat
collector-emitter saturation voltage IC = −100 mA; IB = −5 mA; note 1
−−600
mV
VBEsat
base-emitter saturation voltage
IC = −100 mA; IB = −5 mA; note 1
−−1.1
V
VBE
base-emitter voltage
IC = −2 mA; VCE = −5 V; note 1
600
720
mV
Cc
collector capacitance
IE =ie = 0; VCB = −10 V; f = 1 MHz
3pF
fT
transition frequency
IC = −10 mA; VCE = −5 V; f = 100 MHz;
note 1
100
MHz
F
noise figure
IC = −200 µA; VCE = −5 V; RS =2kΩ;
f = 1 kHz; B = 200 Hz
10
dB
Fig.2 DC current gain; typical values.
BC307B.
handbook, full pagewidth
0
300
200
100
400
MBH727
10−2
10−1
hFE
1
IC (mA)
10
103
102
VCE = 5 V


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