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TISPPBL3 Datasheet(PDF) 2 Page - Bourns Electronic Solutions

Part No. TISPPBL3
Description  DUAL FORWARD-CONDUCTING P-GATE THYRISTORS FOR ERICSSON MICROELECTRONICS SUBSCRIBER LINE INTERFACE CIRCUITS (SLIC)
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Maker  BOURNS [Bourns Electronic Solutions]
Homepage  http://www.bourns.com
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TISPPBL3 Datasheet(HTML) 2 Page - Bourns Electronic Solutions

 
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OCTOBER 2000 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Rating
Symbol
Value
Unit
Repetitive peak off-state voltage, VGK =0, -40 °C TJ 85 °CVDRM
-170
V
Repetitive peak gate-cathode voltage, VKA =0, - 40 °C TJ 85 °CVGKRM
-160
V
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
ITSP
A
10/1000 µs(Telcordia GR-1089-CORE Issue 2, with Revision 1, February 1999)
30
5/310 µs (IT U-T K.20, K.21 & K.45, K.44 open-circuit voltage wave shape 10/700 µs)
40
2/10 µs(Telcordia GR-1089-CORE Issue 2, with Revision 1, February 1999)
100
Non-repetitive peak on-state current, 50/60 Hz, TA =25 °C (see Notes 2 and 3)
ITSM
A
100 ms
10
1s
5s
300 s
900 s
4.4
2.1
0.64
0.60
Non-repetitive peak gate current, 1/2 µspulse, cathodes commoned (see Note 1)
IGSM
40
A
Operating free-air temperature range
TA
-40 to +85
°C
Junction temperature
TJ
-40 to +150
°C
Storage temperature range
Tstg
-65 to +150
°C
NOTES: 1. Initially, the protector must be in thermal equilibrium with -40 °C ≤ TJ ≤ 85 °C. The surge may be repeated after the device returns
to its initial conditions. Above 85 °C, derate linearly to zero at 150 °C lead temperature.
2. These non-repetitive rated currents are peak values for either polarity. The rated current values may be applied either to the Ring
to Ground or to the Tip to Ground terminal pairs. Additionally, both terminal pairs may have their rated current values applied
simultaneously (in this case the Ground terminal current will be twice the rated current value of an individual terminal pair).
3. Values for VGG = -120 V. For values at other voltages see Figure 4. Above 25 °C, derate linearly to zero at 150 °C lead
temperature.
The TISPPBL3 is a dual forward-conducting buffered p-gate overvoltage protector. It is designed to protect the Ericsson Microelectronics
SLICs (Subscriber Line Interface Circuits) against overvoltages on the telephone line caused by lightning, a.c. power contact and induction.
The TISPPBL3 limits voltages that exceed the referenced SLIC supply rail levels.
The SLIC line driver section is typically powered by a negative voltage, VBat, in the region of -10 V to -90 V. The protector gate is connected to
this negative supply. This references the protection (clipping) voltage to the negative supply voltage. As the protection voltage will track the
negative supply voltage, the overvoltage stress on the SLIC is minimized. The TISPPBL3 buffered gate design reduces the loading on the SLIC
supply during overvoltages caused by power cross and induction.
Positive overvoltages are clipped to ground by diode forward conduction. Negative overvoltages are initially clipped close to the SLIC negative
supply rail value. If sufficient current is available from the overvoltage, then the protector will crowbar into a low voltage ground referenced
on-state condition. As the overvoltage subsides, the high holding current of the crowbar prevents d.c. latchup.
These monolithic protection devices are fabricated in ion-implanted planar vertical power structures for high reliability and in normal system
operation they are virtually transparent. The TISPPBL3 has an 8-pin plastic small-outline surface mount package, D suffix, and is a universal
substitute for TISPPBL1D and TISPPBL2D devices.
Recommended Operating Conditions
Absolute Maximum Ratings, -40 °C ≤ TA ≤ 85 °C (Unless Otherwise Noted)
TISPPBL3 Programmable Protector
Description
See Figure 10
Min
Typ
Max
Unit
C1
Gate decoupling capacitor
100
220
nF
RSA
RSB
Series resistance for GR-1089-CORE first-level and second-level surge survival
Series resistance for GR-1089-CORE first-level surge survival
Series resistance for ITU-T recommendation K.20, K.21 and K.45 for coordination with a
400 V primary protector
40
25
10


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