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TISP6151X Datasheet(PDF) 6 Page - Bourns Electronic Solutions

Part No. TISP6151X
Description  DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
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Maker  BOURNS [Bourns Electronic Solutions]
Homepage  http://www.bourns.com
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TISP6151X Datasheet(HTML) 6 Page - Bourns Electronic Solutions

   
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JULY 1995 — REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
DEVICE PARAMETERS
TISP61511D Gated Protectors
General
Thyristor based overvoltage protectors, for telecommunications equipment, became popular in the late 1970s. These were fixed voltage
breakover triggered devices, likened to solid state gas discharge tubes. As these were new forms of thyristors, the existing thyristor terminology
did not cover their special characteristics. This resulted in the invention of new terms based on the application usage and device characteristic.
Initially, there was a wide diversity of terms to describe the same thing, but today the number of terms have reduced and stabilized.
Programmable, (gated), overvoltage protectors are relatively new and require additional parameters to specify their operation. Similarly to the
fixed voltage protectors, the introduction of these devices has resulted in a wide diversity of terms to describe the same thing. To help promote
an understanding of the terms and their alternatives, this section has a list of alternative terms and the parameter definitions used for this data
sheet. In general, the Bourns approach is to use terms related to the device internal structure, rather than its application usage as a single
device may have many applications each using a different terminology for circuit connection.
Alternative Symbol Cross-Reference Guide
This guide is intended to help the translation of alternative symbols to those used in this data sheet. As in some cases the alternative symbols
have no substance in international standards and are not fully defined by the originators, users must confirm symbol equivalence. No liability
will be assumed from the use of this guide.
Parameter
Data Sheet
Symbol
Al
ternative
Symbol
Alternative Parameter
Non-repetitive peak on -state pulse current
ITSP
IPP
Peak pulse current
Off-state current
ID
IR
IRM
Reverse leakage current LINE/GND
Gate reverse current (with A and K terminals connected)
IGAS
IRG
Reverse leakage current GATE/LINE
Off-state voltage
VD
VR
VRM
Reverse voltage LINE/GND
Peak forward recovery voltage
VFRM
VFP
Peak forward voltage LINE/GND
Breakover voltage
V(BO)
VSGL
Dynamic switching voltage GND/LINE
Gate voltage, (VGG is gate supply voltage referenced
to the A terminal)
VG
Vgate
VGATE
VS
GATE/GND voltage
Repetitive peak off-state voltage
VDRM
VMLG
Maximum voltage LINE/GND
Repetitive peak gate-cathode voltage
VGKM
VMGL
Maximum voltage GATE/LINE
Gate-cathode voltage
VGK
VGL
GATE/LINE voltage
Gate-cathode voltage at breakover
VGK(BO)
VDGL
Dynamic switching voltage GATE/LINE
Cathode-anode voltage
VK
VLG
VGND/LINE
LINE/GND voltage
Anode-cathode capacitance
CAK
Coff
Off-state capacitance LINE/GND
Cathode 1 terminal
K1
Tip
Tip terminal
Cathode 2 terminal
K2
Ring
Ring terminal
Anode terminal
A
GND
Ground terminal
Gate terminal
G
Gate
Gate terminal
Thermal Resistance, junction to ambient
RθJA
Rth (j-a)
Thermal Resistance, junction to ambient


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