Electronic Components Datasheet Search
  English  ▼

Delete All
ON OFF
ALLDATASHEET.COM

X  

Preview PDF Download HTML

BD245 Datasheet(PDF) 2 Page - Bourns Electronic Solutions

Part No. BD245
Description  NPN SILICON POWER TRANSISTORS
Download  5 Pages
Scroll/Zoom Zoom In 100% Zoom Out
Maker  BOURNS [Bourns Electronic Solutions]
Homepage  http://www.bourns.com
Logo 

BD245 Datasheet(HTML) 2 Page - Bourns Electronic Solutions

   
Zoom Inzoom in Zoom Outzoom out
 2 / 5 page
background image
BD245, BD245A, BD245B, BD245C
NPN SILICON POWER TRANSISTORS
2
PRODU CT
INFORMA TION
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V(BR)CEO
Collector-emitter
breakdown voltage
IC = 30 mA
(see Note 5)
IB = 0
BD245
BD245A
BD245B
BD245C
45
60
80
100
V
ICES
Collector-emitter
cut-off current
VCE = 55 V
VCE = 70 V
VCE = 90 V
VCE =115 V
VBE =0
VBE =0
VBE =0
VBE =0
BD245
BD245A
BD245B
BD245C
0.4
0.4
0.4
0.4
mA
ICEO
Collector cut-off
current
VCE = 30 V
VCE = 60 V
IB =0
IB =0
BD245/245A
BD245B/245C
0.7
0.7
mA
IEBO
Emitter cut-off
current
VEB =
5 V
IC =0
1
mA
hFE
Forward current
transfer ratio
VCE =
4 V
VCE =
4 V
VCE =
4 V
IC = 1 A
IC = 3 A
IC = 10 A
(see Notes 5 and 6)
40
20
4
VCE(sat)
Collector-emitter
saturation voltage
IB =
0.3 A
IB =
2.5 A
IC = 3A
IC = 10 A
(see Notes 5 and 6)
1
4
V
VBE
Base-emitter
voltage
VCE =
4 V
VCE =
4 V
IC = 3 A
IC = 10 A
(see Notes 5 and 6)
1.6
3
V
hfe
Small signal forward
current transfer ratio
VCE = 10 V
IC = 0.5 A
f = 1 kHz
20
|h
fe|
Small signal forward
current transfer ratio
VCE = 10 V
IC = 0.5 A
f = 1 MHz
3
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
RθJC
Junction to case thermal resistance
1.56
°C/W
RθJA
Junction to free air thermal resistance
42
°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
ton
Turn-on time
IC = 1 A
VBE(off) = -3.7 V
IB(on) = 0.1 A
RL = 20 Ω
IB(off) = -0.1 A
tp = 20 µs, dc ≤ 2%
0.3
µs
toff
Turn-off time
1µs


Html Pages

1  2  3  4  5 


Datasheet Download




Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ]  

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Alldatasheet API   |   Link Exchange   |   Manufacturer List
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn