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BD245 Datasheet(PDF) 1 Page - Bourns Electronic Solutions

Part No. BD245
Description  NPN SILICON POWER TRANSISTORS
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Maker  BOURNS [Bourns Electronic Solutions]
Homepage  http://www.bourns.com
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BD245 Datasheet(HTML) 1 Page - Bourns Electronic Solutions

   
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BD245, BD245A, BD245B, BD245C
NPN SILICON POWER TRANSISTORS
P R O D UCT
INFORMA TION
1
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
Designed for Complementary Use with the
BD246 Series
80 W at 25°C Case Temperature
10 A Continuous Collector Current
15 A Peak Collector Current
Customer-Specified Selections Available
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.64 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 24 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 Ω,
VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V.
RATING
SYMBOL
VALUE
UNIT
Collector-emitter voltage (RBE = 100 Ω)
BD245
BD245A
BD245B
BD245C
VCER
55
70
90
115
V
Collector-emitter voltage (IC = 30 mA)
BD245
BD245A
BD245B
BD245C
VCEO
45
60
80
100
V
Emitter-base voltage
VEBO
5V
Continuous collector current
IC
10
A
Peak collector current (see Note 1)
ICM
15
A
Continuous base current
IB
3A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Ptot
80
W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Ptot
3W
Unclamped inductive load energy (see Note 4)
½LIC
2
62.5
mJ
Operating junction temperature range
Tj
-65 to +150
°C
Storage temperature range
Tstg
-65 to +150
°C
Lead temperature 3.2 mm from case for 10 seconds
TL
250
°C
SOT-93 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRAAA
B
C
E
1
2
3


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