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RJF0410JPE-00-J3 Datasheet(PDF) 2 Page - Renesas Technology Corp

Part # RJF0410JPE-00-J3
Description  40V - 40A - N Channel Thermal FET Power Switching
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJF0410JPE-00-J3 Datasheet(HTML) 2 Page - Renesas Technology Corp

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RJF0410JPE
R07DS1237EJ0300 Rev.3.00
Page 2 of 7
Oct 29, 2015
Typical Operation Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Input voltage
VIH
3.5
V
VIL
1.2
V
Input current
(Gate non shut down)
IIH1
100
A
Vi = 8 V, VDS = 0
IIH2
50
A
Vi = 3.5 V, VDS = 0
IIL
1
A
Vi = 1.2 V, VDS = 0
Input current
(Gate shut down)
IIH(sd)1
0.8
mA
Vi = 8 V, VDS = 0
IIH(sd)2
0.35
mA
Vi = 3.5 V, VDS = 0
Shut down temperature
Tsd
175
C
Channel temperature
Gate operation voltage
Vop
3.5
12
V
Drain current
(Current limitation value)
ID limt
40
A
VGS = 5 V, VDS = 10 V Note 4
Notes: 4. Pulse test
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain current
ID1
74
A
VGS = 3.5 V, VDS = 10 V Note 5
ID2
10
mA
VGS = 1.2 V, VDS = 10 V
ID3
40
A
VGS = 5 V, VDS = 10 V Note 5
Drain to source breakdown
voltage
V(BR)DSS
40
V
ID = 10 mA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
16
V
IG = 800
A, VDS = 0
V(BR)GSS
–2.5
V
IG = –100
A, VDS = 0
Gate to source leak current
IGSS1
100
A
VGS = 8 V, VDS = 0
IGSS2
50
A
VGS = 3.5 V, VDS = 0
IGSS3
1
A
VGS = 1.2 V, VDS = 0
IGSS4
–100
A
VGS = –2.4 V, VDS = 0
Input current (shut down)
IGS(OP)1
0.8
mA
VGS = 8 V, VDS = 0
IGS(OP)2
0.35
mA
VGS = 3.5 V, VDS = 0
Zero gate voltage drain current
IDSS
10
A
VDS = 32 V, VGS = 0, Tc = 110
C
Gate to source cutoff voltage
VGS(off)
1.1
2.1
V
VDS = 10 V, ID = 1 mA
Forward transfer admittance
|yfs|
20
46
S
ID = 20 A, VDS = 10 V Note 5
Static drain to source on state
resistance
RDS(on)
11.3
15
m
ID = 20 A, VGS = 5 V Note 5
RDS(on)
9
13
m
ID = 20 A, VGS = 10 V Note 5
Output capacitance
Coss
1098
pF
VDS = 10 V, VGS = 0, f = 1MHz
Turn-on delay time
td(on)
24.7
s
VGS = 10 V, ID= 20 A, RL = 1.5
Rise time
tr
99.3
s
Turn-off delay time
td(off)
7.44
s
Fall time
tf
13.3
s
Body-drain diode forward
voltage
VDF
0.9
V
IF = 40 A, VGS = 0 Note 5
Body-drain diode reverse
recovery time
trr
122
ns
IF = 40 A, VGS = 0
diF/dt = 50 A/
s
Over load shut down
operation time Note 6
tos1
0.63
ms
VGS = 5 V, VDD = 16 V
Notes: 5. Pulse test
6. Including the junction temperature rise of the over loaded condition.


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