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RJF0409JSP Datasheet(PDF) 5 Page - Renesas Technology Corp

Part # RJF0409JSP
Description  40V, 5A Silicon N Channel Thermal FET Power Switching
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJF0409JSP Datasheet(HTML) 5 Page - Renesas Technology Corp

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RJF0409JSP
Preliminary
R07DS1228EJ0300 Rev.3.00
Page 5 of 7
Jul 28, 2015
200
180
160
140
120
0
100
246
8
10
ID = 0.2 A
10
μ
100
μ
1 m
10 m
100 m
1
10
100
1000
10000
10
1
0.1
0.01
0.001
0.0001
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot
pulse
DM
P
PW
T
D =
PW
T
θch-f(t) = γs (t) · θch - f
θch-f = 125°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
10
μ
100
μ
1 m
10 m
100 m
1
10
100
1000
10000
10
1
0.1
0.01
0.001
0.0001
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot
pulse
DM
P
PW
T
D =
PW
T
θch-f(t) = γs (t) · θch - f
θch-f = 166°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
Forward transfer admittance vs.
Drain Current
Drain Current ID (A)
Gate to Source Voltage VGS (V)
Shutdown Case Temperature vs.
Gate to Source Voltage
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width
(Operation of 2 devices; allowable value per device)
0.1
1
10
10
100
1
0.1
25°C
Tc = –40°C
150°C
VDS = 10 V
Pulse Test


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