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CM200DY-28H Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor

Part No. CM200DY-28H
Description  HIGH POWER SWITCHING USE INSULATED TYPE
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
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CM200DY-28H Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor

   
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Sep.1998
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
OUTPUT CHARACTERISTICS
(TYPICAL)
02468
10
240
80
0
VGE = 20V
15
12
11
8
7
Tj = 25
oC
160
320
400
10
9
13
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
TRANSFER CHARACTERISTICS
(TYPICAL)
0
4
8
12
16
20
320
240
160
80
0
VCE = 10V
Tj = 25°C
Tj = 125°C
400
COLLECTOR-CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
0
80
160
240
320
4
3
2
1
0
400
VGE = 15V
Tj = 25°C
Tj = 125°C
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
0
4
8
12
16
20
8
6
4
2
0
Tj = 25°C
IC = 80A
IC = 400A
IC = 200A
1.0
1.5
2.0
2.5
3.0
4.0
101
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
102
103
Tj = 25°C
3.5
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
CAPACITANCE VS. VCE
(TYPICAL)
10-1
100
102
102
101
100
10-1
VGE = 0V
101
Cies
Coes
Cres
COLLECTOR CURRENT, IC, (AMPERES)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
104
101
102
103
102
101
td(on)
tr
103
VCC = 800V
VGE = ±15V
RG = 1.6Ω
Tj = 125°C
td(off)
tf
EMITTER CURRENT, IE, (AMPERES)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
101
102
103
102
101
trr
Irr
di/dt = -400A/
µsec
Tj = 25°C
102
101
100
GATE CHARGE, QG, (nC)
GATE CHARGE, VGE
20
0
400
800
16
12
8
4
0
1200
1600
VCC = 800V
VCC = 600V
IC = 200A
MITSUBISHI IGBT MODULES
CM200DY-28H
HIGH POWER SWITCHING USE
INSULATED TYPE


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