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CM200DY-28H Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor

Part No. CM200DY-28H
Description  HIGH POWER SWITCHING USE INSULATED TYPE
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
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CM200DY-28H Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor

   
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Sep.1998
Dimensions
Inches
Millimeters
A
4.25
108.0
B
3.66
±0.01
93.0
±0.25
C
2.44
62.0
D
1.89
±0.01
48.0
±0.25
E
1.22 Max.
31.0 Max.
F
0.98
25.0
G
0.85
21.5
H
0.60
15.2
Dimensions
Inches
Millimeters
J
0.59
15.0
K
0.55
14.0
L
0.30
8.5
M
0.28
7.0
N
0.256 Dia.
Dia. 6.5
P
0.24
6.0
Q
M6 Metric
M6
R
0.20
5.0
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching appli-
cations. Each module consists of
two IGBTs in a half-bridge configu-
ration with each transistor having a
reverse-connected super-fast re-
covery free-wheel diode. All com-
ponents and interconnects are iso-
lated from the heat sinking base-
plate, offering simplified system
assembly and thermal manage-
ment.
Features:
Low Drive Power
Low VCE(sat)
Discrete Super-Fast Recovery
Free-Wheel Diode
High Frequency Operation
Isolated Baseplate for Easy
Heat Sinking
Applications:
AC Motor Control
Motion/Servo Control
UPS
Welding Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM200DY-
28H is a 1400V (VCES), 200 Am-
pere Dual IGBT Module.
Type
Current Rating
VCES
Amperes
Volts (x 50)
CM
200
28
MITSUBISHI IGBT MODULES
CM200DY-28H
HIGH POWER SWITCHING USE
INSULATED TYPE
Outline Drawing and Circuit Diagram
A
B
F
F
G
D
C
K
J
P
P
R
C2E1
C1
E2
N - DIA.
(4 TYP.)
Q - M6 THD
(3 TYP.)
M
M
E
M
H
L
E1
C1
E2
TAB#110 t=0.5
G1
E2
G2
C2E1


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