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BAT18 Datasheet(PDF) 2 Page - NXP Semiconductors

Part No. BAT18
Description  Band-switching diode
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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BAT18 Datasheet(HTML) 2 Page - NXP Semiconductors

   
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1996 Mar 13
2
Philips Semiconductors
Product specification
Band-switching diode
BAT18
FEATURES
• Continuous reverse voltage:
max. 35 V
• Continuous forward current:
max. 100 mA
• Low diode capacitance:
max. 1.0 pF
• Low diode forward resistance:
max. 0.7
Ω.
APPLICATION
• Band switching.
DESCRIPTION
Planar high performance
band-switching diode in a small
rectangular plastic SOT23 SMD
package.
PINNING
PIN
DESCRIPTION
1
anode
2
not connected
3
cathode
Fig.1 Simplified outline (SOT23) and symbol.
Marking code: A2.
handbook, halfpage
21
3
MAM185
2
n.c.
1
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on a FR4 printed-circuit board.
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VR
continuous reverse voltage
35
V
IF
continuous forward current
100
mA
Tstg
storage temperature
−55
+125
°C
Tj
junction temperature
125
°C
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VF
forward voltage
IF = 100 mA; see Fig.2
1.2
V
IR
reverse current
see Fig.3
VR = 20V
100
nA
VR = 20 V; Tj =60 °C
1
µA
Cd
diode capacitance
f = 1 MHz; VR = 20 V; see Fig.4
0.8
1.0
pF
rD
diode forward resistance
IF = 5 mA; f = 200 MHz; see Fig.5
0.5
0.7
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
330
K/W
Rth j-a
thermal resistance from junction to ambient
note 1
500
K/W


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